发明名称 HOGKENSLIG RESISTBELEGGNING BESTAENDE AV ETT FLERTAL SKIKT PA ETT SUBSTRAT
摘要 <p>A high sensitivity resist layer structure for high energy radiation exposure is formed by coating plural layers of radiation degradable polymers on a substrate which layers are successively slower dissolving in the resist developer. Upon exposure and solvent development, a resist edge profile is obtained which is particularly useful for metal lift-off.</p>
申请公布号 SE410997(B) 申请公布日期 1979.11.19
申请号 SE19740015451 申请日期 1974.12.10
申请人 * INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 W M * MOREAU;C H * TING
分类号 G03F7/039;G03F1/68;G03F7/095;G03F7/26;H01L21/027;H01L21/3205;H05K3/02;(IPC1-7):32B7/02;03C1/72;03C5/00;05K3/00 主分类号 G03F7/039
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