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发明名称
半导体装置及多层配线基板
摘要
于多层配线构造所包含的第1配线层及第2配线层之间,夹设介电常数系平均2.5以下之气体或绝缘物。又,在第1配线层的配线及第2配线层的配线之间,设置导电连接体;且在第1配线层的既定配线及第2配线层的既定配线之间,设置介电常数系5以下之绝缘物热传导体。
申请公布号
TW200830514
申请公布日期
2008.07.16
申请号
TW096131781
申请日期
2007.08.28
申请人
国立大学法人 东北大学;财团法人国际科学振兴财团
发明人
大见忠弘
分类号
H01L23/522(2006.01)
主分类号
H01L23/522(2006.01)
代理机构
代理人
周良谋;周良吉
主权项
地址
日本
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