发明名称 |
NEGATIVE RESISTANCE DIODE AND PROCESS FOR MAKING SAME |
摘要 |
<p>NEGATIVE RESISTANCE DIODE AND PROCESS FOR MAKING SAME A modified Read-type diode having an extremely thin doping spike and with the electric field in the drift region terminated before the buffer zone. The buffer zone and a drift region are first grown upon a doped semiconductor substrate using epitaxial vapor deposition growth techniques employing a furnace tube within a multiple temperature zone reaction furnace. The doping spike is produced by injecting under pressure a fixed predetermined volume of dopant into the furnace tube. An avalanche region is grown over the doping spike and a Schottky barrier contact or semiconducting material of the opposite conductivity type grown over the avalanche region. Avalanche regions having a length less than 15% of the total active length of the device and doping spikes having a width of 500.ANG. or less are disclosed in a high-efficiency device.</p> |
申请公布号 |
CA1066429(A) |
申请公布日期 |
1979.11.13 |
申请号 |
CA19760256973 |
申请日期 |
1976.07.14 |
申请人 |
RAYTHEON COMPANY |
发明人 |
BIERIG, ROBERT W.;STEELE, SAMUEL R. |
分类号 |
H01L29/36;H01L29/864;H01L29/868;(IPC1-7):01L29/90;01L21/24 |
主分类号 |
H01L29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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