| 摘要 |
PURPOSE:To endow a positive type resist material for ionized radiation lithography with improved performances, almost free of any problems in practical uses, in sensitivity, resolution, and close adhesivity with a substrate, by using a specified copolymer for this material. CONSTITUTION:A copolymer of fluoroalkyl methacrylate, such as 2,2,3,4,4,4- hexafluorobutyl methacrylate, and t-butyl methacrylate in a molor ratio of 1:1 or the like is dissolved in a solvent, such as cyclohexanone. This resist solutions is coated on a substrate, baked in a nitrogen gas stream, and then, irradiated with electron beams. Subsequently, this is developed with a developing solution, such as a solvent mixture of ethyl cellosolve and isopropyl alcohol. |
