| 摘要 |
PURPOSE:To form a Schottky junction hard in adhesion by interposing halfway a metal layer which more reacts on an oxidized film chemically and actively than a metal electrode. CONSTITUTION:On semi-insulating GaAs substrate 1, n-type GaAs2 is stacked and source and drain electrodes 3 and 4 are both provided. A resist mask is used to form concave part 7 in layer 2 by etching and on the bottom covered with oxidized film 8, Pt11 of approximate 2000Angstrom and Al9 of 8000Angstrom are stacked to form a gate electrode. In the above constitution, oxidized film 8 reacts on Pt actively and Ga and As constituting film 8 combine with Pt for metallization. The oxidized film, therefore, disappears substantially, so that ideal Schottky junction characteristics can be obtained. It is effective to set the layer thickness of Pt to 50 to 500Angstrom . Then, one part of thin film 8 does not react on platinum completely and remains, and thick Pt reacts on passive layer 2, thereby causing a crystal defect. |
