发明名称 PROCESSING METHOD OF PRESSURIZING AND HEATING FOR SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To enable to reuse the quartz capsule, by constituting the quartz capsule packing and sealing the wafer and water for oxidation internally with the capsule itself and the cover having the vent tube, and performing air-tight bonding with platinum packing. CONSTITUTION:The capsule 1 is constituted with the quartz capsule 2 open for one end and the cover 4 of quartz having the vent tube 3. Further, the flanges 5 and 6 are formed on the main body 2 and the cover 4 respectively and they are coupled via the platinum packing 7 to hold air tight in the capsule 1. Further, the capsule 1 is contained in the bomb 8 made of metal and it is heated in the heating furnace 9. This bomb 8 is constituted with the main body 10 and the cover 11 having the pressure gas supply tube 12, and the pipe 12 is connected to the pressure bomb 16 via the joint 13, pressure adjusting valve 14 and opening valve 15. With this constitution, the wafer 18 and the water 19 weighed in advance are put in the capsule 1 to cuase oxide film on the wafer 18 surface with heating.
申请公布号 JPS54138375(A) 申请公布日期 1979.10.26
申请号 JP19780045894 申请日期 1978.04.20
申请人 FUJITSU LTD 发明人 TAKAGI MIKIO;MAEDA MAMORU;FUJINUMA AKIRA
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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