| 摘要 |
PURPOSE:To obtain a highly reliable planar-type transistor for high voltage and high frequency use by forming the diffusion resistance, layer within base layer to be used as the stabilized resistance. CONSTITUTION:N-type isolation layer 12 is provided on the surface part of P-type base layer 2 as if layer 12 surrounded entire emitter layer 3, and N-type diffusion resistance layer 4a of high specific resistance is provided near the outside of layer 12 and in correspondence to each emitter layer. Such planar-type transistor is isolated by isolation layer 12 into 1st NPN transistor comprising emitter layer 3, P-type base layer 2 and N-type semiconductor substrate 1 and 2nd NPN transistor comprising diffusion resistance layer 4a, layer 2 and substrate 1. These 1st and 2nd transistors are connected in parallel via emitter wiring 7. |
