| 摘要 |
A reference voltage generating device comprises two insulated gate field effect transistors (IGFETs) T1, T2, whose gates are doped differently so that their Fermi energy levels are different. This causes the IGFETs to have different threshold voltages, the difference of which is proportional to the difference in Fermi energy levels. By subtracting the drain voltages V1, V2 of the two IGFETs the difference of the threshold voltages can be obtained. This creates a stable reference voltage since the Fermi energy levels do not vary greatly with temperature. A variety of methods of manufacturing the semiconductor are disclosed, depending on the nature of the IGFET to be formed. The reference voltage generating circuit is applicable to many electronic devices, such as operational amplifiers. voltage comparators. Schmitt trigger circuits battery checkers and other devices are also described. <IMAGE> |
