METHOD OF DIFFUSING IMPURITIES IN SEMICONDUCTOR BODIES

摘要

A method of diffusing doping impurities in semiconductor bodies by the transfer in the vapour phase from a source in a condensed form. The diffusion space is of the "half-open type" and a cold point is maintained in it at the end opposite to the location of the source which is placed near a restricted passage to the atmosphere surrounding the space. Application: semiconductors of the III-V type.