| 摘要 |
A production method of N-type semiconductor gas sensing element having good adsorption of all reductive gas, sensibility, fast switching velocity and compensating effect of temp. and humidity had step(1) mixing SnO2 to 90% weight, PdCl2 to 3% weight and SiO2 to 7% weight, step(2) sintering for 1 hour at 600≦̸C after pressurizing in a mould, step(3) drying for 5 minutes at 100-200≦̸C, step(4) connecting pt coil of 0.08mm and step(5) reheating the element for 3-4 hours at 100-200≦̸C.
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