| 摘要 |
PURPOSE:To geve a desirable pinch-off voltage to a J-FET, and also to reduce dispersion in the characteristics of a resistor by forming the resistor at the same time of forming the island rgion and channel region in an epitaxial layer grown on the semiconductor substrate. CONSTITUTION:Onto P-type Si substrate 101, SiO2 film 102 is adhered and provided with a window, N<+>-type regions 103a to 103c which become buried regions are formed by diffusion, and film 102 is removed to form N-type layer 104 on the entire surface by epitaxial growth. Next, SiO2 film 105 is formed selectively on it and separate region 106 extending to substrate 101 is formed by diffusion with regions 103a to 103c between. Then, film 105 is changed into film 107, and P-type well region 108 of a J-FET and P-type well region 109 of a resistor are formed in separated layer 104 by ion injection. Although gate contact region 110 in region 108 and resistance contact regions 111 and 112 in region 109 are formed, base region 113 of a bipolar transistor is also formed in layer 104 at the same time. |
