| 摘要 |
PURPOSE:To constitute thick polysilicon wiring substantially, by applying the process used for polysilicon as two layers at the memory cell side also to the peripheral wiring side, in two layer polyislicon semiconductor devices. CONSTITUTION:On the semiconductor substrate 1, the first gate insulation film 2, film 2, first layer polysilicon 3 formed on the film 2, second layer polysilicon 5 contacted on the first layer 3 through the through-hole of second gate insulation film, memory cell region consisting of the aluminum wiring 8 contacting with the second layer 5, and the region having substantially thick silicon wiring by contacting the other part 12 of the second layer polysilicon superimposingly on the other part of the first layer polysilicon formed on the peripheral insulation film 10 of this region, are provided. Thus, the wiring resistance can be reduced and corresponding to speed up can be made. |
