| 摘要 |
PURPOSE:To prevent the defection due to temperature performance change for resistive element, by laying out the resistive element on the semiconductor substrate through the use of resistance versus temperature characteristics change of the resistive element due to piezo resistance effect. CONSTITUTION:The potential V10 has negative temperature characteristics with the amplifier 2, input terminal 3 and output terminal 4. The resistive elements RA and RB are located with the distance d, RA is located inside more than RB at the semiconductor substrate 1, and lengthwise is changed. The temperature characteristics of RA/RB is adjustable, the terminal 4 has positive temperature characteristics, and flat temperature characteristics can be obtained with RA/RB of positive characteristics. Further, it is possible by changing the location angle theta of RA and RB in place of the distance d. |
