| 摘要 |
PURPOSE:To manufacture a high-density and high-speed Si gate MOSIC by enlarging the room of wiring to a contact window by forming a negative resist pattern by self-matching without performing a high-temperature treatment and by making an opening in a SiO2 film. CONSTITUTION:On Si substrate 11, SiO2 film 12 is formed and on it, polycrystal Si film 13 is formed selectively. Next, SiO2 film 14 is deposited through vapor-phase growth and negative resist 15 is applied onto it. Then, glass mask 16 with mask pattern 17 wider than or equal to the pattern width of polycrystal Si film 13 is matched with the surface of film 13 before exposure. At this time, some part of resist 15 right below pattern 17 is also exposed through the diffraction and reflection of ultraviolet ray (x). Mask-matching is therefore simplified and since oxidized film 14 is formed at a low temperature, the diffused layer will not change, which is favorable for high-density LSI manufacture. Next, opening part 18 is formed definitely in the convex surface of SiO2 film 14 by self-matching through development and post-baking. Then, film 14 and resist 15 are both removed and opening part 19 is formed. |
