发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR |
摘要 |
<p>A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.</p> |
申请公布号 |
JPS5487175(A) |
申请公布日期 |
1979.07.11 |
申请号 |
JP19770155179 |
申请日期 |
1977.12.23 |
申请人 |
CHO LSI GIJUTSU KENKYU KUMIAI |
发明人 |
HIGASHINAKAGAHA IWAO;SHIMA SHIYOUHEI;MORIYA TAKAHIKO |
分类号 |
H01L23/522;H01L21/285;H01L21/60;H01L21/768;H01L23/532 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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