GATE ASSIST TURN-OFF, AMPLIFYING GATE THYRISTOR AND A PACKAGE ASSEMBLY THEREFOR

摘要

A GATE ASSIST TURN-OFF, AMPLIFYING GATE THRYISTOR AND A PACKAGE ASSEMBLY THEREFOR A conventional amplifying gate thyristor is provided with gate assist turn-off capability by a package assembly. The package assembly comprises an encapsulation means adapted for packaging therein the amplifying gate thyristor, said encapsulation means including a locator means for aligning and supporting a gate contact adapted to make ohmic contact with a gate electrode of the amplifying gate thyristor and for aligning and supporting a diode relative to said gate electrode. A diode is disposed in a semiconductor body having cathode and anode regions forming a PN junction therebetween and adjoining opposed major surfaces of said semiconductor body, respectively. The diode is fastened to said locator means with said cathode region thereof making ohmic contact with said gate contact and said anode region thereof making ohmic contact with an anode electrode affixed on a major surface of said semiconductor body and adapted to make ohmic contact with a floating electrode of the amplifying gate thyristor.