| 摘要 |
PURPOSE:To obtain a multi-layer structure epi-layer where there is no transition layer and crystal defects are reduced, by covering the upper face of the epi-layer, which is growing, with a crystal plate, which has the same composition as the epi- layer and has an area wider than the epi-layer, at a gas composition switching time in the epi-layer growing process. CONSTITUTION:Substrate supporting stand 3 in quartz is constituted by left and right wing parts 3a and 3b, and these wing parts 3a and 3b are freely rotated by pole brace 5. Meanwhile, rib 3c is provided at the circumference edge of one wing part 3a, and vise 4 to fix covering crystal plate 2 is fitted. In this constitution, covering InP crystal plate 2 which has an area larger than substrate 1 where an epi-layer should be grown is fixed in one wing part 3a, and InP substrage 1 where the epi-layer should be grown is arranged in other wing part 3b. After that, two wing parts 3a and 3b are put together and are closed by pole brace 5 first and are put in a reaction furnace, and a temperature is risen. After that, gas such as GaCl, InCl, AsH3 and PH3 is successively switched while repeating opening and closing these wing parts, and a desired multi-layer epi-layer is precipitated. |
