METHOD OF MAKING GALLIUM PHOSPHIDE LIGHT EMMISSION ELEMENT

摘要

A high efficiency Gap light emitting diode (LED) was made by Zn diffusion into Gap wafers grown on Gap substrates with double liquid phase epitaxy. The next donor and acceptor concentration profiles were(2-6) x1017cm-3 and (1-3)×1017cm and (1-3)×1017cm-3 in the n,p type growth layer respectively. The doped n-type crystal with carrier concentration of (1-3)×1017cm-3 was used for the substrates. A cooling rate below 3≦̸C/min. was used at the beginning of the growth of the n, p layer to give a high quality crystal.