| 发明名称 |
Method of producing semiconductor device involving the use of silicon nitride as an oxidation mask |
| 摘要 |
A method of producing a semiconductor device comprises removing all of the masking films used for forming desired semiconductor regions in the substrate, newly forming an insulation film and selectively forming a second insulation film at predetermined portions by the use of a silicon nitride film as the mask.
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| 申请公布号 |
US4155802(A) |
申请公布日期 |
1979.05.22 |
| 申请号 |
US19760746898 |
申请日期 |
1976.12.02 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO LTD |
发明人 |
HIRAKI, SHUNICHI;ISHIDA, HIDEKUNI;KITANE, SHOICHI;YONEZAWA, TOSHIO |
| 分类号 |
H01L29/73;H01L21/314;H01L21/316;H01L21/32;H01L21/329;H01L21/331;H01L21/76;(IPC1-7):H01L21/31;H01L21/30 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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