发明名称 Bipolar transistor integrated circuit with injection logic - contains FET normally non-conducting and junctions integrated with bipolars (CS 31.8.78)
摘要 <p>The integrated injection logic circuit consists of bipolar transistors, whose bases are connected to a current generator and to the input electrode of the circuit. The collector is connected to the output electrode and the emitter is earthed. The circuit also incorporates a field effect transistor which is normally non conducting. The field effect transistor has a channel where the gate is designed as a p-n junction. The drain is connected to an output electrode of the circuit. The gate is connected to the input electrode of the circuit and the source is earthed. It is used for large scale production of integrated circuits for microprocessers, electronic computers, digital watches and read-write memories with large capacity.</p>
申请公布号 DE2748017(A1) 申请公布日期 1979.05.03
申请号 DE19772748017 申请日期 1977.10.26
申请人 KREMLEV,VJATSCHESLAV JAKOVLEVITSCH;ERSCHANOV,RUSTEM SCHAKANOVITSCH;MARKOV,ALEKSANDR PROKOPJEVITSCH;LEBEDEV,VALERIJ VASILJEVITSCH 发明人 JAKOVLEVITSCH KREMLEV,VJATSCHESLAV;SCHAKANOVITSCH ERSCHANOV,RUSTEM;PROKOPJEVITSCH MARKOV,ALEKSANDR;VASILJEVITSCH LEBEDEV,VALERIJ
分类号 H01L27/02;(IPC1-7):01L27/06 主分类号 H01L27/02
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