| 发明名称 |
Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide |
| 摘要 |
Electronic grade aluminum nitride semiconductor material may be uniformly nucleated and epitaxially formed on an aluminum oxide substrate by reacting aluminum oxide or aluminum nitride with nitrogen in the presence of carbon.
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| 申请公布号 |
US4152182(A) |
申请公布日期 |
1979.05.01 |
| 申请号 |
US19780905625 |
申请日期 |
1978.05.15 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORP |
发明人 |
RUTZ, RICHARD F |
| 分类号 |
H05B33/10;C09K11/64;C30B25/02;C30B25/22;C30B29/38;H01L21/20;H01L21/205;H01L21/86;H01L33/32;(IPC1-7):H01L21/20 |
主分类号 |
H05B33/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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