| 摘要 |
PURPOSE:To reduce the substrate deterioration greatly by applying the Zn diffusion to the LED substrate under 650 deg.C, and thus to ensure a high luminous efficiency. CONSTITUTION:N-added N-epitaxial layer 2 is stacked on (111) surface of N-type GaP substrate and then Zn is diffused to layer 2 about 7 m through the sealed-tube method to form P-type layer 3. The diffusion temperature is set at 650 deg.C with 30 hours of diffusion. Thus, the substrate than conventional, and the luminous efficiency is improved about 40% on the average. |
