发明名称 |
Field effect transistor having a linear attenuation characteristic and an improved distortion factor with multiple gate drain contacts |
摘要 |
A field effect transistor having two electrodes and distributed resistance therebetween is disclosed. This device is used as an attenuator when a main signal is applied across one drain electrode and a source and a control voltage is applied between a gate and the source. The output is derived from the other drain electrode.
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申请公布号 |
US4141023(A) |
申请公布日期 |
1979.02.20 |
申请号 |
US19770845712 |
申请日期 |
1977.10.26 |
申请人 |
SONY CORPORATION |
发明人 |
YAMADA, TAKAAKI |
分类号 |
H01L29/00;H01L29/08;H03G1/00;H03H11/24;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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