Method for photolithographic pattern generation in a photoresist layer.

摘要

With the method, in which the photoresist is exposed to radiation more than once, a hole pattern corresponding to the pattern of openings (15, 16) of an exposure mask (14) as well as a hole pattern corresponding to the negative of the pattern of openings (28, 29, 30) of another exposure mask (25) are sequentially produced ink a single photoresist layer (12). The method is used e.g. in forming holes (23, 24) defined by the positive image into an oxide layer (11) on a substrate (10), and in producing a metallization pattern (36a, 36b) defined by the negative image for interconnecting areas of the substrate (10).