| 发明名称 |
SEMICONDUCTOR DIODE ELEMENT |
| 摘要 |
PURPOSE:To decrease the dependency of semiconductor thin-film on an insulating substrate on impurity concentrations and produce diodes of a small series resistance at the forward biasing. |
| 申请公布号 |
JPS5416184(A) |
申请公布日期 |
1979.02.06 |
| 申请号 |
JP19770081314 |
申请日期 |
1977.07.06 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
SAKUMA SATORU;SUZUKI TOSHIYUKI |
| 分类号 |
H01L27/06;H01L21/8222;H01L29/861 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
