Process for producing a semiconductor device by vapor growth of single crystal Al{hd 2{b O{HD 3

摘要

A single crystal of Al2O3 is epitaxially grown on an Si-single crystal of a semiconductor device by a vapor growth method. This vapor growth method employs starting materials of HCl, Al and CO2. Further, this method advantageouslyemploys a carrier gas to carry the gaseous product of the reaction of HCl with Al. An apparatus for the production of the above-mentioned semiconductor device comprises a chamber means for the reaction of the gaseous product and the single crystal, a reaction chamber for the reaction of Al and HCl, and an introducing tube for introducing CO2 in the proximity of the Si-single crystal.