| 发明名称 |
PRODUCTION OF SILICON CARBIDE SUBSTRATE |
| 摘要 |
PURPOSE:To produce a SiC semiconductor material of large area with good reproducibility by coating the surface of a SiC thin film formed on a Si substrate with a metal or resin and removing the Si substrate by dissolution after which a SiC epitaxial layer is formed on the surface of the SiC thin film. |
| 申请公布号 |
JPS53146300(A) |
申请公布日期 |
1978.12.20 |
| 申请号 |
JP19770062489 |
申请日期 |
1977.05.25 |
| 申请人 |
SHARP KK |
发明人 |
SAKURAI TAKESHI;INOOKU TOSHIKI |
| 分类号 |
B28B1/30;C01B31/36;C04B35/56;C04B35/565;C23C16/32;C30B25/18;C30B29/36 |
主分类号 |
B28B1/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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