首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
摘要
申请公布号
JPS53162011(U)
申请公布日期
1978.12.19
申请号
JP19770068742U
申请日期
1977.05.26
申请人
发明人
分类号
A01B35/00;(IPC1-7):A01B35/00
主分类号
A01B35/00
代理机构
代理人
主权项
地址
您可能感兴趣的专利
ORGANIC-INORGANIC COMPOSITE LAYER FOR LITHIUM BATTERY AND ELECTRODE MODULE
RECHARGEABLE BATTERY AND MANUFACTURING METHOD OF THE SAME
ORGANIC ELECTROLUMINESCENT ELEMENT
ORGANIC LIGHT EMITTING DISPLAY DEVICE
ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE USING THE SAME
WRAP AROUND PHASE CHANGE MEMORY
POST-FABRICATION SELF-ALIGNED INITIALIZATION OF INTEGRATED DEVICES
SURFACE MOUNTED PIEZOELECTRIC VIBRATOR
LIGHT EMITTING DIODE WITH MICRO-STRUCTURE LENS
DEVICES FOR THERMAL MANAGEMENT OF PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE
DILUTE GROUP III-V NITRIDE INTERMEDIATE BAND SOLAR CELLS WITH CONTACT BLOCKING LAYERS
STRUCTURES AND METHODS FOR IMPROVING SOLAR CELL EFFICIENCY AND MECHANICAL STRENGTH
METHODS, PROCESS AND FABRICATION TECHNOLOGY FOR HIGH-EFFICIENCY LOW-COST CRYSTALLINE SILICON SOLAR CELLS
CMOS DEVICES WITH STRESSED CHANNEL REGIONS, AND METHODS FOR FABRICATING THE SAME
LDMOS DEVICE WITH IMPROVED AVALANCHE ENERGY AND ASSOCIATED FABRICATING METHOD
ASYMMETRIC CHANNEL GROWTH OF A CLADDING LAYER OVER FINS OF A FIELD EFFECT TRANSISTOR (FINFET) DEVICE
METHOD FOR THE FORMATION OF A FINFET DEVICE HAVING PARTIALLY DIELECTRIC ISOLATED FIN STRUCTURE
Semiconductor Device and Power Conversion Device Using the Same
METHOD FOR FORMING A SEMICONDUCTOR DEVICE
SANDWICH SILICIDATION FOR FULLY SILICIDED GATE FORMATION