WRAP AROUND PHASE CHANGE MEMORY

摘要

A device is disclosed. The device includes a top electrode, a bottom electrode and a storage element between the top and bottom electrodes. The storage element includes a heat generating element disposed on the bottom electrode, a phase change element wrapping around an upper portion of the heat generating element, and a dielectric liner sandwiched between the phase change element and the heat generating element.

主权项

1. A method of forming a device comprising:
providing a bottom electrode; forming a storage element over the bottom electrode, wherein the storage element comprises
a heat generating element on the bottom electrode,a phase change stack which comprises at least a phase change layer and a dielectric liner sandwiched between the phase change layer and the heat generating element, wherein the phase change layer and the dielectric liner of the phase change stack each wraps around an upper portion of the heat generating element, wherein the dielectric liner covers the uppermost surface of the heat generating element; andforming a top electrode over the storage element.