发明名称 |
Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density |
摘要 |
An integrated circuit employing both sides of a base substrate or wafer and a method of making the same are provided. In one aspect, the integrated circuit includes a base substrate that has a first side and a second side opposite the first side. The first side has a first semiconductor layer and a first isolation structure positioned thereon wherein the first side surrounds the first semiconductor layer. The second side has a second semiconductor layer and a second isolation structure positioned thereon wherein the second isolation structure surrounds the second semiconductor layer. A first circuit device is positioned on the first semiconductor layer. A second circuit device is positioned on the second semiconductor layer. The method enables simultaneous processing of both sides of a given wafer. Fabrication efficiency is increased through higher throughput and much higher yields per wafer.
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申请公布号 |
US6150708(A) |
申请公布日期 |
2000.11.21 |
申请号 |
US19980191305 |
申请日期 |
1998.11.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;FULFORD, H. JIM;MAY, CHARLES E. |
分类号 |
H01L21/822;H01L27/06;H01L27/092;(IPC1-7):H01L25/00 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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