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发明名称
IMPROVEMENTS IN OR RELATING TO REDUCING BOUNDARY CHARGES IN SEMICONDUCTOR LAYERS GROWN ON A SUBSTRATE
摘要
申请公布号
IE39656(B1)
申请公布日期
1978.12.06
申请号
IE19740001650
申请日期
1974.08.06
申请人
SIEMENS AG
发明人
分类号
H01L29/78;H01L21/00;H01L21/265;H01L21/314;H01L21/86;H01L29/786;(IPC1-7):H01L21/36
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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