发明名称 |
Driver circuit, display device including the driver circuit, and electronic appliance including the display device |
摘要 |
An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit. |
申请公布号 |
US9406398(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201314068012 |
申请日期 |
2013.10.31 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
Koyama Jun;Miyake Hiroyuki |
分类号 |
G11C19/28;G09G3/32 |
主分类号 |
G11C19/28 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A semiconductor device comprising a shift register circuit, the shift register circuit comprising:
a first transistor; a second transistor; and a third transistor, wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor layer, wherein the first transistor, the second transistor, and the third transistor are depletion-mode transistors, wherein one of a source and a drain of the first transistor is connected to one of a source and a drain of the second transistor, wherein a gate of the first transistor is connected to the other of the source and the drain of the first transistor, wherein one of a source and a drain of the third transistor is connected to a gate of the second transistor, wherein a first signal is input to a gate of the third transistor, and wherein an amplitude voltage of the first signal is greater than a potential difference between the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor. |
地址 |
Kanagawa-ken JP |