ANORDNUNG ZUR EPITAXIALEN ZUECHTUNG PERIODISCHER HALBLEITERSTRUKTUREN AUS DER GASPHASE

摘要

Device for growing epitaxial semiconductor periodic structures from a gas phase comprises (a) a pressure-tight reactor tilted at 10-80 degrees to the horizontal and filled with a gas contg. an agent for carrying the chem. transport reaction, (b) an electric motor located outside reactor for rotating it about its longitudinal axis, (c) >=2 semiconductor sources located inside reactor in one plane and adjacent each other, (d) >=1 substrate near the sources, (e) >=1 gp. of elements comprising a holder of a semiconductor sources, a substrate holder and a device for maintaining a constant gap between substrate and sources and (f) externally located substrate and source heaters. Design eliminates need for gaseous sources and localises source-to-substrate transfer. Growth has high efficiency and source losses are minimised.