| 摘要 |
1526898 Liquid phase epitaxy SIEMENS AG 15 July 1977 [14 Sept 1976] 29749/77 Heading B1S Epitaxial layers, e.g. of GaAs or Ga x Al 1-x As y P 1-y where 0#x#1 and 0#y#1 are grown on a monocrystalline substrate by liquid phase slide epitaxy in such a way as to avoid spreading of the melt by irregular growth at the edges of the epitaxial growth layer. Substrates are used which are so shaped that the boundary edges of the substrate are not those at which rapid edge growth mainly occurs. When excess melt is removed, the substrates are so arranged that the melt moves across those edges of the substrate and of grown epitaxial layers at which the rate of edge growth is very low.
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