| 摘要 |
1525400 Semiconductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 2 Dec 1975 [5 Dec 1974] 49418/75 Heading H1K Contacts are formed on a semiconductor device by providing a Pd-containing layer 5, Fig. 3, on an insulating layer 4 on a semiconductor body 1, 2, removing the Pd-containing layer 5 and the insulating layer 4 in regions where the device contacts are to be provided to form windows 7, depositing layers 8, 9, Fig. 5, of conductive material, different from the Pdcontaining material, on the structure, and exposing it to hydrogen which is absorbed by the Pd in the layer 5 which swells so that it can be removed together with the conductive layers 8, 9 above it, to leave the contacts in the windows 7. The layers 4, 5 in the windows 7 are removed by ion-etching through a photoresist mask 6 and the parts of the Pd-containing layer 5 which swell on absorbing hydrogen are removed by compressed air. The method may be used to form a Schottky diode or an emitter contact of a transistor, in which the semiconductor is Si, the insulating layer 4 is Si-oxide or glass, and the conductive layers are Ti, Au, Ni, Cr, Pt or Al. The layer 5 may be pure Pd. |
