| 发明名称 |
PRODUCTION OF PHOTOETCHING MASK FOR PRODUCTION OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To make a mask for fine working by covering the back, side faces and part of surface of a glass substrate coated by electron beam resist with Al foil, etc. and radiating electron beams. |
| 申请公布号 |
JPS53106575(A) |
申请公布日期 |
1978.09.16 |
| 申请号 |
JP19770021251 |
申请日期 |
1977.02.28 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
OKUYAMA YASUSHI;HASHIMOTO TADAHIRO;KAMOSHITA MOTOTAKA |
| 分类号 |
G03F1/00;G03F1/56;H01L21/027;H01L21/302 |
主分类号 |
G03F1/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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