| 摘要 |
PURPOSE:To obtain the resist highly sensitive to X-rays by mixing the metal salt monomer of (meth)acrylic acid expressed by the specific formula with a radiation sensitive resist. CONSTITUTION:The metal salt monomer of the (meth)acrylic acid expressed by the formula I is mixed with the radiation sensitive resist. In the formula, R denotes H or CH3; n denotes 2 to 3; M denotes a metal ion. Since the metal absorbs X-rays, the metal salt monomer of the (meth)acrylic acid in which the metal is converted to the form of the soluble salt is used. Since the monomer is not usable as a resist as it is, the monomer is used by mixing the same with the radiation sensitive resist, such as photoresist or electron beam resist. The reason for using the (meth)acrylic acid lies in that the (meth)acrylic acid is easily soluble in solvents and is easily modifiable as this acid has easily polymerizable double bonds, such as vinyl group. The metal element is incorporated into the resist by adopting such structure and, therefore, the absorption of X-rays arises and the higher sensitivity is attained. |
