Programmable fixed value store with semiconductor substrate - has spaced regions diffused into semiconductor layer and gates extending down into common source region (NL 8.11.77)

摘要

Grooves run at intervals along the bit lines at points where the word lines intersect the bit lines. One of these grooves extends into the substrate and has a V-shaped cross-section containing a floating gate of conductive material. Each gate extends down into a common source region from a drain region formed by the defined bit line. Between each floating gate and the side walls of the groove is a thin dielectric layer and between floating gate and word line is another thin dielectric layer.