发明名称 |
SEMICONDUCTOR RESISTANCE DEVICE |
摘要 |
PURPOSE:To obtain a high resistance suitable for incorporation into an oscillation circuit using complementary type MIS transistors by forming a shallow region of a low concentration and opposite conductivity type within the region of one conductivity type of a semiconductor substrate through ion implantation thereby forming a resistance layer. |
申请公布号 |
JPS53101988(A) |
申请公布日期 |
1978.09.05 |
申请号 |
JP19770016056 |
申请日期 |
1977.02.18 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
NAKAJIMA SEIICHI |
分类号 |
H01L27/04;H01L21/265;H01L21/822;H01L29/78;H01L29/8605 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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