Method for fabricating MNOS memory circuits

摘要

MNOS memory circuit fabrication problems that result in leakage, memory device depletion mode switching and leakage paths at the edges of silicon islands are eliminated by a production process in which deposited and thermal oxides are used as a diffusion mask on the island edges, selective control of the threshold level of the memory device is achieved by ion implantation, and a thick oxide is grown on the silicon island edges to control charge injection.