| 发明名称 |
SILICON NITRIDE FILM MASK |
| 摘要 |
PURPOSE:To prevent the occurrence of dislocation in a substrate owing to the stress of a mask by keepin the film thickness of the Si3N4 film mask formed on a Si substrate up to the specified value above 400Angstrom . |
| 申请公布号 |
JPS5387176(A) |
申请公布日期 |
1978.08.01 |
| 申请号 |
JP19770001491 |
申请日期 |
1977.01.12 |
| 申请人 |
HITACHI LTD |
发明人 |
NANBA MITSUO;TAMAOKI YOUICHI;MAKI MICHIYOSHI |
| 分类号 |
H01L21/027;H01L21/302 |
主分类号 |
H01L21/027 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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