SEMICONDUCTOR ELEMENT,申请号JP19760159454-传众专利搜索

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发明名称	SEMICONDUCTOR ELEMENT
摘要	PURPOSE:To obtain a required high dielectric strength characteristics by providing a protruding part from an isolating diffused layer and setting the distance from a guard ring as specified.
申请公布号	JPS5383472(A)	申请公布日期	1978.07.22
申请号	JP19760159454	申请日期	1976.12.28
申请人	FUJI ELECTRIC CO LTD	发明人	ITOU SHINICHI
分类号	H01L21/761;H01L21/331;H01L29/06;H01L29/73;H01L29/74;H01L29/861	主分类号	H01L21/761
代理机构		代理人
主权项
地址

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