| 摘要 |
PURPOSE:From the diffusion layer at the grounding side of P or N-channel enhancement-depletion structured MOSIC, the normal voltage and opposite polarity bias are applied to the substrate, and a capacitance and high resistance layer are interposed between the substrate and grounding terminal to make the currents toward the groun small, so that the pattern designing will be simplified and the integration will be improved to obtain the high speed operation. |
