发明名称 COMPOSITE DIODE
摘要 PURPOSE:To improve the forward V-I characteristics at a low voltage area, by forming the Schottky barrier respectively on an area on the N type Si substrate and on other areas with coating of Mo and Al, placing the P type diffusion area adjacent to this, and forming the Pt silicide layer on a part of them.
申请公布号 JPS5353268(A) 申请公布日期 1978.05.15
申请号 JP19760127811 申请日期 1976.10.26
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 IKEDA TADASHI;KOGA TSUTOMU;AMANO TAKASHI
分类号 H01L27/06;H01L21/8222;H01L29/861;H01L29/872 主分类号 H01L27/06
代理机构 代理人
主权项
地址