| 摘要 |
<p>PURPOSE: To generate a differential signal quickly by pre-charging a selected bit line and a reference bit line, successively making a reference memory cell a conduction state, while selecting a word line of a read memory cell. CONSTITUTION: A pre-charge signal P and a balance signal BAL are made a low state, a reference cell 202 ref is turned on, and P channel transistors Tr 251, 252 are turned on. As a memory cell Tr 201-N-1 is selected for reading, column selecting transistors Tr 204-1, 205-1 are turned on, also a BIT line 203-1 and a reference line 203 RET are pre-charged through Tr 252, 254. After that, the balance signal BAL is made high state, the reference cell Tr 202 ref is turned off, and the Tr 251 is turned off. Therefore, a differential signal can be generated at high speed being equal to a speed of a true differential signal generated by using two transistors memory cells or higher.</p> |
