| 摘要 |
Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.
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