| 摘要 |
A method is used of measuring the transfer charge during the operation of a charge-coupled device. It relies on the connection of a capacitor to a gate electrode. A simple device comprises a semiconductor substrate (10) with a number of electrodes (12, 22, 24) separated therefrom by an insulating layer of silicia of silicon nitride. A floating gate electrode (12) is connected to a common charge capacitor (CL), a voltage source (13) and a switch (15). On either side of the gate are transfer electrodes (18, 20) connected to a pulse generator to transfer charge into and out of the associated potential well (16). Auxiliary gate electrodes (22, 24) with associated potential wells (26, 28) are on the other side of the transfer electrodes. Charge transfer results in the change of potential of the capacitor (CL) which can readily be measured. |
