发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To prevent the occurrence of punch-through between emitter and collector despite narrowing of base width and obtain transistors of low power consumption and high density by providing an N<+> type layer of a concentration higher than that of an N type epitaxial layer to the active base regions of PNP transistors. |
申请公布号 |
JPS5329083(A) |
申请公布日期 |
1978.03.17 |
申请号 |
JP19760103822 |
申请日期 |
1976.08.30 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
FUJITA TSUTOMU;YAMADA HARUO;OGAWA HISATO |
分类号 |
H01L21/8222;H01L21/331;H01L27/02;H01L27/06;H01L29/73 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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