发明名称 CONNECTING METHOD FOR SEMICONDUCTOR ELEMENT OR DEVICE
摘要 PURPOSE:Poly -Si layers in the same type as a PN junction are formed at both the sides of the PN junction, and this surface is connected to a stem or an electrode through wax materials, thereby obtaining the excellent connection.
申请公布号 JPS5313359(A) 申请公布日期 1978.02.06
申请号 JP19760087813 申请日期 1976.07.22
申请人 发明人
分类号 H01L21/52;H01L21/58 主分类号 H01L21/52
代理机构 代理人
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