发明名称 Protection device of an integrated circuit against electrostatic discharges.
摘要 <p>The invention relates to the protection of integrated circuits against electrostatic discharges. The protection structure includes a thyristor: N+ region (16) connected to earth (18); P<-> substrate (20); N<-> deep well (12) forming a trigger region; and P+ region (22) linked to an external connection pin to be protected (PL). The trigger region is linked by a resistor R1 of low value (a few ohms at most) to the pin (PL). This resistor increases the current for which the thyristor fires and eliminates certain risks of destroying the circuit. <IMAGE></p>
申请公布号 EP0568421(A1) 申请公布日期 1993.11.03
申请号 EP19930401052 申请日期 1993.04.22
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 TAILLIET, FRANCOIS
分类号 H01L27/04;H01L21/822;H01L27/02;H01L29/74;H02H7/20;H02H9/04;(IPC1-7):H01L23/60 主分类号 H01L27/04
代理机构 代理人
主权项
地址